TH50VPF5783_toshiba_FALSH规格书
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上传日期：2013-09-13
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TH50VPF5783_toshiba_TH50VPF5782/83AASB
TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
PSEUDO SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION
TENTATIVE
Special to LGE
The TH50VPF5782/83AASB is a mixed multi-chip package containing a 33,554,432-bit pseudo static RAM and a 134,217,728-bit flash memory. The BYTE inputs can be used to select the optimal memory configuration. The power supply for the TH50VPF5782/83AASB can range from 2.7 V to 3.3 V The TH50VPF5782/83AASB can perform simultaneous read/write operations on its flash memory and is available in a 73-pin BGA package making it suitable for a variety of applications.
FEATURES
Power supply voltage VCCps = 2.7 V~3.3 V VCCf = 2.7 V~3.3 V Pseudo SRAM and Flash Memory page operation mode Page read operation by 8 words Logic co
TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
PSEUDO SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION
TENTATIVE
Special to LGE
The TH50VPF5782/83AASB is a mixed multi-chip package containing a 33,554,432-bit pseudo static RAM and a 134,217,728-bit flash memory. The BYTE inputs can be used to select the optimal memory configuration. The power supply for the TH50VPF5782/83AASB can range from 2.7 V to 3.3 V The TH50VPF5782/83AASB can perform simultaneous read/write operations on its flash memory and is available in a 73-pin BGA package making it suitable for a variety of applications.
FEATURES
Power supply voltage VCCps = 2.7 V~3.3 V VCCf = 2.7 V~3.3 V Pseudo SRAM and Flash Memory page operation mode Page read operation by 8 words Logic co
关键词： TH50VPF5783 toshiba
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