infineon FET-IGBT控制
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上传日期：2012-05-19
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infineon FET-IGBT控制Conductivity-Modulated FETs-IGBT
Up to a reverse voltage of VDS ≤ 200 V, power MOSFETs are superior in all respects to any
other switching devices components. With a supply voltage of VB > 200 V, the bipolar
transistor has a lower saturation voltage (VCE sat ≤ VDSon) and is cheaper. In comparison with a
bipolar transistor (assuming the same chip dimensions), a power MOSFET with a reverse
voltage of VDS = 1000 V has significantly higher ON-resistance, and therefore high voltage
drops and high static losses when switched on. The high ON-resistance of high-voltage
MOSFETs can only be reduced by means of a larger chip surface. High-voltage MOSFETs
are nonetheless used in application areas where their advantages represent a critical factor:
short switching time, no storage time, easy to control
Up to a reverse voltage of VDS ≤ 200 V, power MOSFETs are superior in all respects to any
other switching devices components. With a supply voltage of VB > 200 V, the bipolar
transistor has a lower saturation voltage (VCE sat ≤ VDSon) and is cheaper. In comparison with a
bipolar transistor (assuming the same chip dimensions), a power MOSFET with a reverse
voltage of VDS = 1000 V has significantly higher ON-resistance, and therefore high voltage
drops and high static losses when switched on. The high ON-resistance of high-voltage
MOSFETs can only be reduced by means of a larger chip surface. High-voltage MOSFETs
are nonetheless used in application areas where their advantages represent a critical factor:
short switching time, no storage time, easy to control
关键词： infineon FET-IGBT
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