智能IC保持统一的GaAs MESFET的偏置电流
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上传日期：2012-05-06
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摘要：电流传感器监控MESFET的源漏源电流（ IDS ） ，并提供反馈意见，以克服的缺点门转门的输入阈值电压变化的砷化镓金属半导体场效应晶体管，砷化镓MESFET的。
Maxim > App Notes > Amplifier and Comparator Circuits
Keywords: MESFETs, Gallium-Arsenide, GaAs MESFETs, current sense amps, current sensing, mesfet, metal semiconductor field effect Dec 04, 2002
transistors
APPLICATION NOTE 1800
Smart IC Maintains Uniform Bias Current for GaAs MESFETs
Abstract:A current sensor that monitors the drain-source current (IDS) at the source of the MESFET and provides feedback to
the gate input overcoming the drawbacks of gate-turn-on threshold voltage variations for gallium-arsenide metal-semiconductor
field-effect transistors, GaAs MESFETs.
The gate-turn-on threshold voltage for gallium-arsenide metal-semiconductor field-effect transistors (GaAs MESFETs) varies
considerably from part to part, even within a given lot. That
Maxim > App Notes > Amplifier and Comparator Circuits
Keywords: MESFETs, Gallium-Arsenide, GaAs MESFETs, current sense amps, current sensing, mesfet, metal semiconductor field effect Dec 04, 2002
transistors
APPLICATION NOTE 1800
Smart IC Maintains Uniform Bias Current for GaAs MESFETs
Abstract:A current sensor that monitors the drain-source current (IDS) at the source of the MESFET and provides feedback to
the gate input overcoming the drawbacks of gate-turn-on threshold voltage variations for gallium-arsenide metal-semiconductor
field-effect transistors, GaAs MESFETs.
The gate-turn-on threshold voltage for gallium-arsenide metal-semiconductor field-effect transistors (GaAs MESFETs) varies
considerably from part to part, even within a given lot. That
关键词： Maxim MESFETs Gallium-Arsenide GaAs MESFETs current sense amps current sensing mesfet metal semiconductor field effect transistors
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