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The M4N25 device consists of a gallium arsenide infrared emitting diode
optically coupled to a silicon NPN phototransistor detector.
Most Economical Optoisolator Choice for Medium Speed, Switching Applications
Meets or Exceeds All JEDEC Registered Specifications

M4N25管脚引脚定义说明：

PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE

M4N25内部结构图

Applications
General Purpose Switching Circuits
Interfacing and coupling systems of different potentials and impedances
I/O Interfacing
Solid State Relays

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

1. Isolation surge voltage is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)

1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = IC/IF x 100%.
3. For test circuit setup and waveforms, refer to Figure 14.
4. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.

M4N25封装尺寸

Package Dimensions in Inches (mm)

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