射頻積體電路製程技術介紹(繁體)
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射頻積體電路製程技術介紹radio frequency
21 Strategies Unlimited 2004 4 13 2.4 , , ( ) 39 2004 6
(radio frequency) 2004 77
38
IC Design 2001, March
( (CMOS) (BiCMOS) (Si BJT) (SiGe) (GaAs MESFET) (HBT) (HEMT) GSM ( IS-54/IS-136 ) (
IC Design 2001, March
39
(Bluetooth) Handyphone system)
PHS(Personal DECT(Digital
)
Enhance Codeless Telecommunications) )
(BiCMOS) (Superheterodyne) ( ) (Deep (GaAs MESFET) ( (T/R Switch) (Low Noise Amplifier) (Power Amplifier) ) (Si Bipolar) (Linearity) (BiCMOS) (Power Added Efficiency PAE) UART (CPU) Sub-Micron CMOS)
(Power Amplifier)
(Direct Conversion) (Low IF) (
(III-V compound semiconductor)
40
IC Design 2001, March
UART
10
(GHz) (III-
V compound semiconductor) (SiGe Epitaxy) (GHz) (III-V compound semiconductor) (silicon) (III-V compound semiconductor)
(L
21 Strategies Unlimited 2004 4 13 2.4 , , ( ) 39 2004 6
(radio frequency) 2004 77
38
IC Design 2001, March
( (CMOS) (BiCMOS) (Si BJT) (SiGe) (GaAs MESFET) (HBT) (HEMT) GSM ( IS-54/IS-136 ) (
IC Design 2001, March
39
(Bluetooth) Handyphone system)
PHS(Personal DECT(Digital
)
Enhance Codeless Telecommunications) )
(BiCMOS) (Superheterodyne) ( ) (Deep (GaAs MESFET) ( (T/R Switch) (Low Noise Amplifier) (Power Amplifier) ) (Si Bipolar) (Linearity) (BiCMOS) (Power Added Efficiency PAE) UART (CPU) Sub-Micron CMOS)
(Power Amplifier)
(Direct Conversion) (Low IF) (
(III-V compound semiconductor)
40
IC Design 2001, March
UART
10
(GHz) (III-
V compound semiconductor) (SiGe Epitaxy) (GHz) (III-V compound semiconductor) (silicon) (III-V compound semiconductor)
(L
关键词： 射頻 積體 電路 製程 技術 介紹
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